发明名称 STRUCTURE FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES
摘要 A structure for protecting an integrated circuit against electrostatic discharges, including a device for removing overvoltages between first and second power supply rails; and a protection cell connected to a pad of the circuit including a diode having an electrode, connected to a region of a first conductivity type, connected to the second power supply rail and having an electrode, connected to a region of a second conductivity type, connected to the pad and, in parallel with the diode, a thyristor having an electrode, connected to a region of the first conductivity type, connected to the pad and having a gate, connected to a region of the second conductivity type, connected to the first rail, the first and second conductivity types being such that, in normal operation, when the circuit is powered, the diode is non-conductive.
申请公布号 US2011042747(A1) 申请公布日期 2011.02.24
申请号 US20100859929 申请日期 2010.08.20
申请人 STMICROELECTRONICS S.A. 发明人 GALY PHILIPPE;ENTRINGER CHRISTOPHE;JIMENEZ JEAN
分类号 H01L29/78 主分类号 H01L29/78
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