发明名称 |
Method for Manufacturing a Resistive Switching Memory Cell Comprising a Nickel Oxide Layer Operable at Low-Power and Memory Cells Obtained Thereof |
摘要 |
A resistive switching non-volatile memory element is disclosed comprising a resistive switching metal-oxide layer sandwiched between and in contact with a top electrode and a bottom electrode, the resistive switching metal oxide layer having a substantial isotropic non-stoichiometric metal-to-oxygen ratio. For example, the memory element may comprise a nickel oxide resistive switching layer sandwiched between and in contact with a nickel top electrode and a nickel bottom electrode whereby the ratio oxygen-to-nickel of the nickel oxide layer is between 0 and 0.85.
|
申请公布号 |
US2011044089(A1) |
申请公布日期 |
2011.02.24 |
申请号 |
US20100792332 |
申请日期 |
2010.06.02 |
申请人 |
IMEC |
发明人 |
GOUX LUDOVIC;REYES JUDIT LISONI;WOUTERS DIRK |
分类号 |
G11C11/56;H01L21/02;H01L45/00 |
主分类号 |
G11C11/56 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|