发明名称 |
Deep trench isolation structure |
摘要 |
A deep trench isolation structure including a deep trench disposed within a substrate to surround an active area on the substrate and a dielectric material filled within the deep trench. The deep trench comprises at least a corner in an arc shape layout or in a polygonal line shape layout. Accordingly, the deep trench isolation structure can be obtained in a better stress condition and with less process time for trench filling.
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申请公布号 |
US2011042777(A1) |
申请公布日期 |
2011.02.24 |
申请号 |
US20090542721 |
申请日期 |
2009.08.18 |
申请人 |
JHANG YOU-DI;HUANG CHUN-YAO;HO KUO-HUA |
发明人 |
JHANG YOU-DI;HUANG CHUN-YAO;HO KUO-HUA |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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