| 摘要 |
1,183,247. Gallium arsenide. MONSANTO CO. 10 Nov., 1967 [10 Nov., 1966], No. 51340/67. Heading B1S. [Also in Divisions Cl and H1] Gallium arsenide double doped with oxygen and one of germanium, tin, sulphur, selenium, or tellurium to a net carrier concentration of up to 5 x 10<SP>15</SP> carriers/cc is obtained as a melt which is crystallized by allowing a temperature gradient to form in the melt and then crystallizing from the coolest to the hottest part of the melt to obtain a body of crystalline gallium arsenide. An example of Ga As with O 2 and Te in a crucible has a gradient of 1243‹C to 1280‹C over a distance of 15" and an initial cooling rate of 0.3 to 2.0‹C/hr until a gradient of 1193‹-1230‹C is reached then a rate of 100‹C/hr is used. The ingot obtained is 37.3 cm long and weighs 831 gm. and is a single crystal from 8 to 36 cm of its length. Examples with Sn and O 2 and Se and O 2 as dopants are given. Reference has been directed by the Comptroller to Specification 1,007,673. |
