发明名称 |
APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a semiconductor, suppressing the contamination of a wafer and achieving high performance and reliability improvement of a semiconductor device. <P>SOLUTION: The apparatus for manufacturing the semiconductor includes: a reactor furnace into which the wafer is introduced; a gas supply mechanism for supplying process gas to the reactor furnace; a gas ejection mechanism for ejecting gas from the reactor furnace; a wafer support member for placing the wafer; a heater having a heater element for heating the wafer to a predetermined temperature and a heater electrode part molded integrally with the heater element; an electrode component connected to the heater electrode part to apply voltage to the heater electrode part; a base for fixing the electrode component; and a rotational driving control mechanism for rotating the wafer. At least a portion of a connection part between the heater electrode part and the electrode component is disposed below the upper face of the base. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011040615(A) |
申请公布日期 |
2011.02.24 |
申请号 |
JP20090187390 |
申请日期 |
2009.08.12 |
申请人 |
NUFLARE TECHNOLOGY INC |
发明人 |
SUZUKI KUNIHIKO;MORIYAMA YOSHIKAZU |
分类号 |
H01L21/205;C23C16/455;C23C16/46;C23C16/509;H01L21/31 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|