发明名称 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a semiconductor, suppressing the contamination of a wafer and achieving high performance and reliability improvement of a semiconductor device. <P>SOLUTION: The apparatus for manufacturing the semiconductor includes: a reactor furnace into which the wafer is introduced; a gas supply mechanism for supplying process gas to the reactor furnace; a gas ejection mechanism for ejecting gas from the reactor furnace; a wafer support member for placing the wafer; a heater having a heater element for heating the wafer to a predetermined temperature and a heater electrode part molded integrally with the heater element; an electrode component connected to the heater electrode part to apply voltage to the heater electrode part; a base for fixing the electrode component; and a rotational driving control mechanism for rotating the wafer. At least a portion of a connection part between the heater electrode part and the electrode component is disposed below the upper face of the base. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011040615(A) 申请公布日期 2011.02.24
申请号 JP20090187390 申请日期 2009.08.12
申请人 NUFLARE TECHNOLOGY INC 发明人 SUZUKI KUNIHIKO;MORIYAMA YOSHIKAZU
分类号 H01L21/205;C23C16/455;C23C16/46;C23C16/509;H01L21/31 主分类号 H01L21/205
代理机构 代理人
主权项
地址