| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with superior reliability. SOLUTION: The semiconductor device includes a high-side switching element having a first switching element, and a low-side switching element having a second switching element and a third switching element. The size of the second switching element is larger than that of the third switching element, and 0<(threshold voltage of third switching element)<(on voltage of internal diode of second switching element) is satisfied. When a potential at a connection point between the first switching element and second switching element becomes higher than -(threshold voltage of third switching element), the third switching element is turned off, and when the potential at the connection point becomes lower than -(threshold voltage of third switching element), the third switching element is turned on. COPYRIGHT: (C)2011,JPO&INPIT
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