III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A III nitride semiconductor light emitting device and a method for fabricating the same are provided to improve the external quantum efficiency of a light emitting device by manufacturing the substrate having a scattering surface with minute unevenness thereon. CONSTITUTION: A plurality of III nitride semiconductor layers(14) is arranged in a substrate. The III nitride semiconductor layer comprises an active layer generating light through recombination of hole and electronics A scattering surface(12) is formed on the substrate to make light from an active layer scattered The deformity diminution part(13) is formed on the diffusing surface. An unevenness part(13) is formed on the scattering surface and reduce the defect in the III nitride semiconductor layer.