| 摘要 |
A method of programming a non-volatile memory including N-bit multi-level cell (MLC) memory cells includes executing first through (N−1)th page programming operations, using an incremental step pulse programming (ISPP) method, to program first through (N−1)th data pages in the MLC memory cells, where each of the first through (N−1)th page programming operations includes an erase programming of erase cells among the MLC memory cells. The method further includes executing an Nth page programming operation, using the ISPP method, to program an Nth data page in the MLC memory cells.
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