发明名称 |
GRAPHENE GROWTH ON A CARBON-CONTAINING SEMICONDUCTOR LAYER |
摘要 |
A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm.
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申请公布号 |
US2011042687(A1) |
申请公布日期 |
2011.02.24 |
申请号 |
US20090546034 |
申请日期 |
2009.08.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHU JACK O.;DIMITRAKOPOULOS CHRISTOS D.;GRILL ALFRED;SUNG CHUN-YUNG |
分类号 |
H01L29/24;B32B9/00;H01L21/20;H01L21/311 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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