发明名称 BARRIER FOR DOPED MOLYBDENUM TARGETS
摘要 A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
申请公布号 WO2010120632(A3) 申请公布日期 2011.02.24
申请号 WO2010US30458 申请日期 2010.04.09
申请人 MIASOLE;JULIANO, DANIEL, R.;MATHIAS, DEBORAH;MACKIE, NEIL, M. 发明人 JULIANO, DANIEL, R.;MATHIAS, DEBORAH;MACKIE, NEIL, M.
分类号 H01L31/042;H01L31/18 主分类号 H01L31/042
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