发明名称 INDUCTIVE PLASMA SOURCE
摘要 Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.
申请公布号 WO2011022612(A2) 申请公布日期 2011.02.24
申请号 WO2010US46110 申请日期 2010.08.20
申请人 MATTSON TECHNOLOGY, INC.;GODYAK, VALERY, A.;CRAPUCHETTES, CHARLES;NAGORNY, VLADIMIR 发明人 GODYAK, VALERY, A.;CRAPUCHETTES, CHARLES;NAGORNY, VLADIMIR
分类号 H05H1/34;H05H1/40 主分类号 H05H1/34
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