MEMORY ELEMENT, STACKING, MEMORY MATRIX AND METHOD FOR OPERATION

摘要

The invention relates to a memory element, to stacking, and to a memory matrix in which said memory element can be used, to a method for operating the memory matrix, and to a method for determining the truth value of a logic operation in an array composed of the memory elements. The memory element has at least one first stable state 0 and a second stable state 1. By applying a first write voltage V0, said memory element can be transferred into the high-impedance state 0 and by applying a second write voltage V1, it can be transferred into the likewise high-impedance state 1. By applying a read voltage VR, the amount of which is smaller than the write voltages V0 and V1, the memory element exhibits different electrical resistance values. In the parasitic current paths occurring in a memory matrix, the memory element acts as a high-impedance resistor, without in principle being limited to unipolar switching. A method has been developed, with which an array composed of the memory elements according to the invention can be turned into a gate for arbitrary logic operations.