| 摘要 |
PROBLEM TO BE SOLVED: To successfully control operation of a transistor including a trench gate by preventing short-circuiting between a source and a drain at a location being lateral to the gate. SOLUTION: The semiconductor device 100 includes the trench gate 118 formed in a trench formed between a drain region 106 and a source region 108 and penetrating an element isolation region 104 to reach a substrate 102. Further, the element isolation region 104 is formed at an outer edge of the trench gate 118 in plan view. Here, the trench gate 118 is so formed that a fist path P<SB>1</SB>reaching the drain region 106 from the source region 108 through below the trench gate 118 is shorter than a second path P<SB>2</SB>or third path P<SB>3</SB>reaching the drain region 106 from the source region 108 through the location being lateral to the trench gate 118. COPYRIGHT: (C)2011,JPO&INPIT
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