| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device for stacking memory cells without forming any memory cell in the part of a crystal defect in a monocrystal silicon layer obtained by epitaxial growth of silicon. SOLUTION: A source line contact hole is formed in the part of a crystal defect 26b in monocrystal silicon layer 200, 204 obtained by epitaxial growth of silicon on an inter-layer insulating film 16. Thus, memory cells of two or more layers are stacked without forming a memory cell of characteristics deteriorated by bonding leak in the part of the crystal defect 26b. COPYRIGHT: (C)2011,JPO&INPIT
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