发明名称 |
PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER |
摘要 |
Si(1-v-w-x)CwAlxNv crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si(1-v-w-x)CwAlxNv substrate, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer are provided. A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer 12 (0<v<1, 0<w<1, 0<x<1, and 0<v+w+x<1) is then grown on the Si substrate 11 by a pulsed laser deposition method.
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申请公布号 |
US2011042788(A1) |
申请公布日期 |
2011.02.24 |
申请号 |
US20090989039 |
申请日期 |
2009.04.17 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SATOH ISSEI;MIYANAGA MICHIMASA;FUJIWARA SHINSUKE;NAKAHATA HIDEAKI |
分类号 |
H01L29/24;H01L21/36;H01L29/20 |
主分类号 |
H01L29/24 |
代理机构 |
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主权项 |
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地址 |
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