| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film photoelectric transducer that can be thinned to a thickness of not greater than several tens of nano meters, and to provide a method of manufacturing the thin-film photoelectric transducers. <P>SOLUTION: The thin-film photoelectric transducer includes: a metal silicide layer formed by diffusing a first metal and silicon onto the surface of a silicon substrate; a conductive thin-film layer formed in a lamination part of a second metal thin-film layer on the surface of the silicon substrate; and a silicon diffusion section formed by diffusing nano particles of silicon near the surface of the silicon substrate between the metal silicide layer and the conductive thin-film layer. Light is applied to the metal silicide layer of which a Schottky interface is formed in a lamination direction to the silicon substrate, or the conductive thin-film layer, and a photoinduced current occurs between the metal silicide layer and the conductive thin-film layer on the surface of the silicon substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT |
