| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor photodiode element capable of reducing a capacity of a photoreception portion, and capable of shortening a running time of a carrier, while keeping a sufficient photoreception sensitivity, and to provide a method of manufacturing the same. <P>SOLUTION: This semiconductor photodiode device includes a semiconductor substrate, the first conductive type first semiconductor layer formed on the semiconductor substrate, the second semiconductor layer of high resistance formed on the first semiconductor layer, the first conductive type third semiconductor layer formed on the second semiconductor layer, and the second conductive type fourth semiconductor layer embedded in the second semiconductor layer, and the fourth semiconductor layer is separated by a fixed distance along a horizontal direction on a surface of the semiconductor substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT |
