| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a multilayered quantum dot structure having respective layers made faster in growing speed than before by providing a normal GaAs layer having a simple structure as an intermediate layer of a quantum dot layer without growing a strain compensation layer increasing processes, and to provide a method of manufacturing the same. <P>SOLUTION: In the multilayered quantum dot structure having InGaAs quantum dot laminate structures provided on a GaAs buffer layer, an arbitrary number of InGaAs quantum dot laminate structures 6 are laminated, each of the laminate structures 6 including an InGaAs thin-film layer 3 provided with a plurality of InGaAs quantum dots 4 and a GaAs buffer layer 5 provided on the InGaAs thin-film layer 3 so as to bury the InGaAs quantum dots 4. <P>COPYRIGHT: (C)2011,JPO&INPIT |
