| 发明名称 |
SWITCHING DEVICE HAVING A MOLYBDENUM OXYNITRIDE METAL GATE |
| 摘要 |
A field effect transistor (FET) includes a body region and a source region disposed at least partially in the body region. The FET also includes a drain region disposed at least partially in the body region and a molybdenum oxynitride (MoNO) gate. The FET also includes a dielectric having a high dielectric constant (k) disposed between the body region and the MoNO gate.
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| 申请公布号 |
US2011042759(A1) |
申请公布日期 |
2011.02.24 |
| 申请号 |
US20090545343 |
申请日期 |
2009.08.21 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOJARCZUK NESTOR A.;CHUDZIK MICHAEL P.;COPEL MATTHEW W.;GUHA SUPRATIK;HAIGHT RICHARD A.;NARAYANAN VIJAY;O'BOYLE MARTIN P.;PARUCHURI VAMSI K. |
| 分类号 |
H01L29/792;H01L21/336 |
主分类号 |
H01L29/792 |
| 代理机构 |
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