METHOD AND APPARATUS FOR THE DETECTION OF ARC EVENTS DURING THE PLASMA PROCESSING OF A WAFER, SURFACE OF SUBSTRATE
摘要
A method for monitoring at least one process parameter of a plasma process being performed on a semiconductor wafer, surface or surface and determine arc events occurring within the plasma tool chamber. The method comprises the steps of detecting the modulated light being generated from the plasma sheath during the plasma process; sampling RF voltage and current signals from the RF transmission line; processing the detected modulated light and the RF signals to produce at least one monitor statistic for the plasma process, and process the monitor signal to determine the occurrence of arcing events during the wafer processing.
申请公布号
WO2011022294(A1)
申请公布日期
2011.02.24
申请号
WO2010US45393
申请日期
2010.08.12
申请人
VERITY INSTRUMENTS, INC.;DANIELS, STEPHEN;GLYNN, SHANE;SOBERON, FELIPE;MAGUIRE, PAUL
发明人
DANIELS, STEPHEN;GLYNN, SHANE;SOBERON, FELIPE;MAGUIRE, PAUL