| 发明名称 |
COMPOSITION FOR CHEMICAL VAPOR DEPOSITION |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a silicon carbonitride film on a base material by means of chemical vapor deposition of a precursor for forming the silicon carbonitride film. <P>SOLUTION: The method uses a precursor selected from a group including amino silane represented by formulas and a mixture thereof so as to form the silicon carbonitride film. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
| 申请公布号 |
JP2011040741(A) |
申请公布日期 |
2011.02.24 |
| 申请号 |
JP20100174006 |
申请日期 |
2010.08.02 |
| 申请人 |
AIR PRODUCTS & CHEMICALS INC |
发明人 |
XIAO MANCHAO;HOCHBERG ARTHUR KENNETH |
| 分类号 |
H01L21/318;C07F7/02;C23C16/42 |
主分类号 |
H01L21/318 |
| 代理机构 |
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