发明名称 MAGNETIC FIELD SENSOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a magnetic field sensor using adjustable graphene. <P>SOLUTION: The magnetic field sensor adopts a graphene sense layer, and Lorentz force acting on a charge carrier transferring in the sense layer changes a path of the charged carrier traveling through the graphene layer. Changes of the path indicating presence of the magnetic field can be detected. The sensor includes one or a plurality of gate electrodes separated from the graphene layer by non-magnetic electric insulating material. Electric resistance of the graphene layer is changed by application of a gate voltage on the gate electrode, and sensitivity and a speed of the sensor is controlled by using application of the gate voltage. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011040750(A) 申请公布日期 2011.02.24
申请号 JP20100179572 申请日期 2010.08.10
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS BV 发明人 GURNEY BRUCE ALVIN;MARINERO ERNESTO E;PISANA SIMONE
分类号 H01L43/06;G01R33/07;G01R33/09;G11B5/39;H01L43/08 主分类号 H01L43/06
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