| 摘要 |
PROBLEM TO BE SOLVED: To prevent occurrence of arcing during crystallization, to efficiently conduct heat to perform crystallization, to simplify processes and to improve yield by bringing a metal film into direct contact with a semiconductor layer, in fabrication of a thin film transistor and an organic electroluminescent display including the same. SOLUTION: The method of fabricating the thin film transistor includes: a process of providing a substrate; a process of forming a buffer layer on the substrate; a process of forming an amorphous silicon layer pattern on the buffer layer; a process of forming a metal film for source/drain electrodes on the entire surface of the substrate; a process of applying an electric field to the metal film for the source/drain electrodes; a process of forming a semiconductor layer by crystallizing the amorphous silicon layer pattern; a process of forming the source/drain electrodes connected to the semiconductor layer by patterning the metal film for the source/drain electrodes; a process of forming a gate insulating film on the entire surface of the substrate; a process of forming a gate electrode positioned on the gate insulating film and corresponding to the semiconductor layer; and a process of forming a protective film on the entire surface of the substrate. COPYRIGHT: (C)2011,JPO&INPIT |
