| 摘要 |
PROBLEM TO BE SOLVED: To improve the performance of a semiconductor device. SOLUTION: In the device, a plurality of p-channel MISFETs Qp1 for logic, a plurality of n-channel MISFETs Qn1 for logic, a plurality of p-channel MISFETs Qp2 for memory, and a plurality of n-channel MISFETs Qn2 for memory are mixedly mounted on a semiconductor substrate 1. At least some of the plurality of p-channel MISFETs Qp1 for logic have a source-drain region made of silicon germanium respectively, and all of the plurality of n-channel MISFETs Qn1 for logic have a source-drain region made of silicon respectively. All of the plurality of p-channel MISFETs Qp2 for memory have a source-drain region made of silicon respectively, and all of the plurality of n-channel MISFETs Qn2 for memory have a source-drain region made of silicon respectively. COPYRIGHT: (C)2011,JPO&INPIT |
