发明名称 |
Method of Forming a Relief Pattern by E-Beam Lithography Using Chemical Amplification, and Derived Articles |
摘要 |
A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1): a second silsesquioxane polymer of the formula (2): and a photosensitive acid generator; patternwise exposing the film by e-beam lithography; heating the exposed film to effect crosslinking of the first polymer and second polymer in the exposed area; and developing the exposed film to form a negative relief pattern.
|
申请公布号 |
US2011045387(A1) |
申请公布日期 |
2011.02.24 |
申请号 |
US20090542821 |
申请日期 |
2009.08.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ALLEN ROBERT D.;BOZANO LUISA;BROCK PHILLIP;LIN QINGHUANG;NELSON ALSHAKIM;SOORIYAKUMARAN RATNAM |
分类号 |
G03F1/00;G03F7/20 |
主分类号 |
G03F1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|