| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material having high resolution and process adaptability, attaining proper pattern shape after exposure, and decreasing line edge roughness, in particular, to provide a chemical amplification positive resist material, and to provide a pattern forming method which uses the same. <P>SOLUTION: The resist material at least includes a high molecular compound having a repeating unit a expressed by general formula (1) and having a carboxyl group substituted with an acid-unstable group, one or more of repeating units b1 and b2 having sulfonium salt, and having a repeating unit c having an amino group. <P>COPYRIGHT: (C)2011,JPO&INPIT |
