| 发明名称 |
CHEMICAL AMPLIFICATION TYPE POSITIVE PHOTORESIST COMPOSITION AND MANUFACTURING METHOD OF RESIST PATTERN |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemical amplification type positive photoresist composition which has good storage stability and is highly sensitive to i-rays. <P>SOLUTION: The chemical amplification type positive photoresist composition includes a photoacid generator containing (A-1) and (A-2) and a resin component (B) whose solubility to an alkali is enhanced by the action of an acid. In the (A-1) and (A-2), X<SP>-</SP>represents monovalent polyatomic anion. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| 申请公布号 |
JP2011039411(A) |
申请公布日期 |
2011.02.24 |
| 申请号 |
JP20090188788 |
申请日期 |
2009.08.17 |
| 申请人 |
SAN APRO KK |
发明人 |
SUZUKI KAZUO;KIMURA HIDEKI |
| 分类号 |
G03F7/004;C09K3/00;G03F7/039 |
主分类号 |
G03F7/004 |
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