发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To uniformize the film thickness distribution, and to suppress the reflected power in a discharge electrode. <P>SOLUTION: A substrate processing apparatus includes high frequency power supply units 17a, 17b for outputting the high frequency power of the predetermined frequency through the phase modulation, an opposing electrode 3 supporting a substrate, a discharge electrode which is supplied with the high frequency power output from the high frequency power supply units to form plasma between the opposing electrode and itself by the high frequency power, a matching box 13 which has a plurality of matching circuits 20a-20d each of which being set to different impedance, and matches the impedance on the discharge electrode side to the impedance on the high frequency power supply unit side, and a selection means 22 for selecting a matching circuit in which the impedance on the discharge electrode side fluctuated by the phase modulation is matched with the impedance on the high frequency power supply unit side out of the plurality of matching circuits when supplying the high frequency power. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011038123(A) 申请公布日期 2011.02.24
申请号 JP20090183534 申请日期 2009.08.06
申请人 MITSUBISHI HEAVY IND LTD 发明人 WADA TAKAYUKI;TAKEUCHI YOSHIAKI;KAWAMURA KEISUKE;SASAGAWA EISHIRO
分类号 C23C16/509;C23C16/24;C23C16/52;H01L21/205;H05H1/00;H05H1/46 主分类号 C23C16/509
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