发明名称 PLASMA TREATMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide an inductive coupled plasma apparatus that arranges a parallel coil having a large total number of turns in a relatively small space. <P>SOLUTION: The plasma processing apparatus includes a processing chamber for plasma-treating a treating object, an introducing means for introducing gas for plasma processing to the processing chamber, an exhaust means for exhausting the processing chamber, a sample stand for mounting the treating object, a power supply means for generating plasma, and at least one inductive coil connected to the power supply means. The inductive coil is configured by connecting two or more coil elements 101 having a same shape in parallel as a circuit, and is arranged so that the center corresponds to a center of the treating object. Input ends 101in of the respective coil elements 101 are arranged at an angle obtained by dividing 360&deg; by the number of coil elements 101, and the coil element has a three-dimensional structure in a diameter direction and height direction. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011040786(A) 申请公布日期 2011.02.24
申请号 JP20100238188 申请日期 2010.10.25
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 EDAMURA MANABU;MIYA TAKESHI;YOSHIOKA TAKESHI
分类号 H01L21/3065;C23C16/507;H05H1/46 主分类号 H01L21/3065
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