| 摘要 |
PROBLEM TO BE SOLVED: To increase a spin orbital interactive action. SOLUTION: The semiconductor laminated structure includes: the first semiconductor layer 12; the second semiconductor layer 14 provided on the first semiconductor layer 12, and having a band gap smaller than that of the first semiconductor layer 12; and the first interface 32 formed between the first semiconductor layer 12 and the second semiconductor layer 14, and for generating an effective magnetic field caused by the spin orbital interactive action. At least one of the first semiconductor layer 12 and the second semiconductor layer 14 comprises a quaternary or more compound semiconductor layer, and a discontinuous energy▵Ec of a conductive band of the first interface is lower than a discontinuous energy▵Ev of a valence band of the first interface, in the semiconductor laminated structure. COPYRIGHT: (C)2011,JPO&INPIT
|
