| 摘要 |
PROBLEM TO BE SOLVED: To overcome the problem in a trench gate type semiconductor device having a gate with a MOS structure provided within the trench, wherein a gate breakdown voltage is lowered by a trench termination of a stripe-shaped trench, thereby improving the reliability of the gate oxide film. SOLUTION: The termination of a trench 5 toward a tip end and an end of a neighboring trench are coupled by a coupling part 51 having a width W<SB>2</SB>greater than a width W<SB>1</SB>of a trench at a straight line part. Particularly, it is preferable for W<SB>2</SB>/W<SB>1</SB>to be equal to or greater than 1.5. In order to make the width W<SB>2</SB>greater than the width W<SB>1</SB>of the trench at the straight line part, a curvature radius of an outer circumference of the coupling part 51 having a curvature is reduced and a curvature radius of an inner circumference is increased. COPYRIGHT: (C)2011,JPO&INPIT
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