| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can suppress degradation of junction strength between a connection pad and connection electrode caused by a test probe on the connection pad. SOLUTION: The connection pad part includes a first metal wiring layer 12 formed on an insulating layer 11 and a second metal wiring layer 14 formed on the above metal wiring layer, and is used for contact of the test probe and connection to the connection electrode. The second metal wiring layer is patterned to form a groove for exposing a portion of an upper surface of the first metal wiring layer. A width of the groove is set to prevent the test probe from coming into contact with the first metal wiring layer when the test probe is pressed on an upper surface of the second metal wiring layer. COPYRIGHT: (C)2011,JPO&INPIT
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