发明名称 INFRARED DETECTION SENSOR AND METHOD OF FABRICATING THE SAME
摘要 In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity.
申请公布号 US2011042569(A1) 申请公布日期 2011.02.24
申请号 US20090648161 申请日期 2009.12.28
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 CHO SEONG MOK;RYU HO JUN;YANG WOO SEOK;CHEON SANG HOON;CHOI CHANG AUCK
分类号 G01J5/00;B44C1/22 主分类号 G01J5/00
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