| 摘要 |
Provided are a chemical vapor deposition (CVD) apparatus and a substrate processing apparatus. The CVD apparatus includes a chamber defining a processing chamber for forming a thin film on a substrate, a shower head that discharges processing gas into the processing chamber, a lid for opening and closing the chamber, a hinge part that pivotably couples the lid to the chamber at one side of the lid, a clamping part is provided to press the other side of the lid to secure the lid to the chamber, and a control part adapted to raise or lower the one side of the lid when the clamping part is pressing the other side of the lid.
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