ESD PROTECTION STRUCTURE

摘要

An electrostatic discharge protection structure (10, 52) includes a first vertical bipolar junction transistor (58); a second vertical bipolar junction transistor (66), wherein the second vertical bipolar junction transistor has a common collector (16) with the first vertical bipolar junction transistor, and the common collector has a first conductivity; a horizontal bipolar junction (62) transistor wherein the collector (18, 22, 20, 24) of the horizontal bipolar junction transistor (62) has a second conductivity that is a different conductivity than the first conductivity, and the base (28) of the horizontal bipolar junction transistor is electrically coupled to the common collector of the first vertical bipolar junction transistor and the second vertical bipolar junction transistor; a first avalanche diode (60) electrically coupled to the base and the collector of the first vertical bipolar junction transistor (58); and a second avalanche diode (64) electrically coupled to the base and the collector of the second vertical bipolar junction transistor.