发明名称 STACKED AMPLIFIER WITH DIODE-BASED BIASING
摘要 <p>Techniques for improving linearity of amplifiers are described. In an exemplary design, an amplifier (e.g., a power amplifier) may include a plurality of transistors coupled in a stack and at least one diode. The plurality of transistors may receive and amplify an input signal and provide an output signal. The at least one diode may be operatively coupled to at least one transistor in the stack. Each diode may provide a variable bias voltage to an associated transistor in the stack. Each diode may have a lower voltage drop across the diode at high input power and may provide a higher bias voltage to the associated transistor at high input power. The at least one transistor may have higher gain at high input power due to the higher bias voltage from the at least one diode. The higher gain may improve the linearity of the amplifier.</p>
申请公布号 WO2011022551(A1) 申请公布日期 2011.02.24
申请号 WO2010US46023 申请日期 2010.08.19
申请人 QUALCOMM INCORPORATED;ZHAO, YU;PLETCHER, NATHAN M. 发明人 ZHAO, YU;PLETCHER, NATHAN M.
分类号 H03F1/02;H03F1/30;H03F3/189 主分类号 H03F1/02
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