| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride crystal substrate that is of low dislocation density and is inexpensively manufactured. <P>SOLUTION: The method for manufacturing a group III nitride crystal substrate includes: a step of growing, by liquid-phase epitaxy, a first group-III nitride crystal 2 onto a base substrate 1; and a step of growing, by hydride vapor phase epitaxy or metal organic vapor phase epitaxy, a second group-III nitride crystal 3 onto the first group-III nitride crystal 2. The second group-III nitride crystal 3 has dislocation density of ≤1×10<SP>7</SP>dislocations/cm<SP>2</SP>, and the surface of the second group-III nitride crystal 3 is planarized so that the surface roughness R<SB>P-V</SB>becomes 0.5 μm or less. <P>COPYRIGHT: (C)2011,JPO&INPIT |
