GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR

摘要

The present disclosure relates to a group III nitride semiconductor light-emitting element comprising: an active layer which generates light by the recombination of electrons and electron holes; a p-type nitride semiconductor layer which is provided on the active layer and supplies electron holes to the active layer; and a second p-type layer which is interposed in the p-type nitride semiconductor layer and is doped with MgN. Also, the present disclosure relates to a production method for a group III nitride semiconductor light emitting element comprising the steps of: providing a first p-type layer on the active layer; providing the second p-type layer by repeatedly alternately growing MgN and a group III nitride semiconductor on the first p-type layer; and providing a third p-type layer on the second p-type layer.