发明名称 |
Method for manufacturing silicon single crystal |
摘要 |
<p>A silicon single crystal rod (24) is pulled from a silicon melt (13) molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal rod and a temperature of the heater, thereby controlling a diameter of the silicon single crystal rod. A PID control in which a PID constant is changed on a plurality of stages is applied to a method which controls the pulling speed of the silicon single crystal rod so that the silicon single crystal rod has a target diameter and a method which controls a heater temperature so that the silicon single crystal rod has the target temperature. A set pulling speed for the silicon single crystal rod is set so that V/G becomes constant, and an actual pulling speed is accurately controlled so as to match with the set pulling speed, thereby suppressing a fluctuation in diameter of the single crystal rod.</p> |
申请公布号 |
EP2287369(A1) |
申请公布日期 |
2011.02.23 |
申请号 |
EP20100191738 |
申请日期 |
2003.07.07 |
申请人 |
SUMCO CORPORATION |
发明人 |
WAKABAYASHI, DAISUKE;SAITO, MASAO;SATO, SATOSHI;FURUKAWA, JUN;KITAMURA, KOUNOSUKE |
分类号 |
C30B15/20;C30B15/00;C30B15/22;C30B29/06 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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