| 摘要 |
PURPOSE: A method of oxidizing a semiconductor device at low temperature is provided to secure a high quality oxide film at low temperature through a large process window. CONSTITUTION: The vacuum chamber of a plasma reactor(100) has a substrate to be oxidized on a substrate support portion. A chamber(110) has an ion generation region which is separated from the substrate support portion. A process gas including hydrogen(H2), oxygen(O2) and steam(H2O vapor) is flowed into the chamber. Inductively coupled plasma is generated in ion generation region of the chamber to form a silicon oxide layer on the substrate.
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