发明名称 Depletion-mode MOSFET circuits and applications
摘要 <p>Positive logic circuits, systems and methods using MOSFETs operated in a depletion-mode, including electrostatic discharge protection circuits (ESD), non-inverting latches and buffers, and one-to-three transistor static random access memory cells. These novel circuits supplement cnhancement-modc MOSFET technology and arc also intended to improve the reliability of the complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) products.</p>
申请公布号 EP2287908(A2) 申请公布日期 2011.02.23
申请号 EP20100172459 申请日期 2008.01.24
申请人 KEYSTONE SEMICONDUCTOR, INC. 发明人 LIN, WENT, T
分类号 H01L27/088;G11C11/412 主分类号 H01L27/088
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