| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which, while securing a design breakdown voltage of the bonding of an activity portion without reaching an electric field causing breakdown in bonding termination structure, and the ratio of a bonding termination structure area occupied to the whole chip area is reduced. SOLUTION: The semiconductor device is provided with at least a first conduction type high impurity concentration layer, a first conduction type low impurity concentration layer in contact with the high impurity concentration layer, and a second conduction type high impurity concentration layer formed on the surface of the first conduction type low impurity concentration layer. Further, the device is provided with an inclination trench to the first conduction type high impurity concentration layer from the surface of the second conduction type high impurity concentration layer. When the total dose D of impurity per unit surface area of the side wall of the inclination trench along the surface of the first conduction type of the side wall of the inclination trench, the impurity concentration of the first conduction type low impurity concentration layer is N, and the thickness is t; the second conduction type low concentration region in which the total dose D is in a range of 0.1Nt<D<10Nt is formed so as to connect a part between the high impurity layers of first conduction type and second conduction type. COPYRIGHT: (C)2005,JPO&NCIPI |
