发明名称 CONTINUOUS OR DISCRETE METALLIZATION LAYER ON A CERAMIC SUBSTRATE
摘要 <p>Surface metallization technology for ceramic substrates is disclosed herein. It makes use of a known phenomenon that many metal-metal oxide alloys in liquid state readily wet an oxide ceramic surface and strongly bond to it upon solidification. To achieve high adhesion strength of a metallization to ceramic, a discrete metallization layer consisting of metal droplets bonded to ceramic surface using metal-metal oxide bonding process is produced first. Next, a continuous metal layer is deposited on top of the discrete layer and bonded to it using a sintering process. As a result a strongly adhering, glass-free metallization layer directly bonded to ceramic surface is produced. In particular, the process can be successfully used to metalize aluminum nitride ceramic with high thermal and electrical conductivity copper metal.</p>
申请公布号 EP2285752(A1) 申请公布日期 2011.02.23
申请号 EP20090739251 申请日期 2009.04.30
申请人 SELEZNEV, MAXIM 发明人 SELEZNEV, MAXIM
分类号 C04B37/02 主分类号 C04B37/02
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