发明名称 |
TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF. |
摘要 |
A trench-gate semiconductor device configuration is provided which is suitable for incorporation in integrated circuits, together with methods for its manufacture. A self-aligned drain region (12a) is provided below the device trench (18). The manufacturing methods include etching an initial trench into a semiconductor body (8), and annealing so as to cause migration of material such that a shallower trench with a cavity (36) below it are formed. The drain region is then formed in the cavity. |
申请公布号 |
EP2286455(A1) |
申请公布日期 |
2011.02.23 |
申请号 |
EP20090754266 |
申请日期 |
2009.05.20 |
申请人 |
NXP B.V. |
发明人 |
SONSKY, JAN;SAARNILEHTO, EERO |
分类号 |
H01L29/78;H01L21/324;H01L21/331;H01L21/336;H01L21/74;H01L29/08;H01L29/739 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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