| 摘要 |
The invention relates to a method for structuring transparent, conductive layers, especially for structuring transparent electrode layers in thin-layer components. The selected wavelength (lambd) of the laser used for structuring should fall substantially within the plasma absorption range of the transparent electrode layer and should fulfill following three requirements: a) the wavelength lambd of the laser must be greater than the cut-off wavelength lambdgopt for optical absorption in the base absorber, b) the wavelength lambd of the laser must be greater than the cut-off wavelength for free substrate absorption (plasma absorption) lambdgpla in the transparent electrode layer, and c) the wavelength lambd of the laser must be less than the cut-off wavelength for metallic reflection lambdgmet on the transparent front electrode. |
