发明名称 Method of error correction in MBC flash memory
摘要 <p>Embodiments of the present invention relate to a method of storing data in a Multi-Bit per Cell flash memory (24, 42), a controller (22) for a Multi-Bit per Cell flash memory (24, 42), and a computer-readable storage medium (58). The method of storing comprising the steps of: (a) computing a joint Error Correction Code, ECC, codeword for at least two of a plurality of logical pages of data bits; and (b) programming the MBC flash memory (24, 42) with said joint ECC codeword.</p>
申请公布号 EP2287740(A1) 申请公布日期 2011.02.23
申请号 EP20100013359 申请日期 2006.10.04
申请人 RAMOT AT TEL-AVIV UNIVERSITY LTD. 发明人 LITSYN, SIMON;ALROD, IDAN;SHARON, ERAN;MURIN, MARK;LASSER, MENAHEM
分类号 G06F11/10 主分类号 G06F11/10
代理机构 代理人
主权项
地址