| 摘要 |
Non-volatile memory is programmed using source side hot electron injection. To generate a high voltage bit line for programming, the bit line corresponding to a selected memory cell is charged to a first level using a first low voltage. A second low voltage is applied to unselected bit lines adjacent to the selected bit line after charging. Because of capacitive coupling between the adjacent bit lines and the selected bit line, the selected bit line is boosted above the first voltage level by application of the second low voltage to the unselected bit lines. The column control circuitry for such a memory array does not directly apply the high voltage and thus, can be designed to withstand lower operating voltages, permitting low operating voltage circuitry to be used.
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