SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要
<p>PURPOSE: The semiconductor device and manufacturing method thereof easily control the threshold voltage of transistor. The semiconductor memory device which integrated and improves the reliability is offered. CONSTITUTION: The string structure comprises string selection transistors more than two serially connected to the first direction. The string selection line(SSL1, SSL2, SSL3) interlinks string selection transistors of string structures. The word line electrically interlinks memory transistors. The bit line(BL1, BL2) electrically interlinks string structures more than adjacent two.</p>
申请公布号
KR20110017685(A)
申请公布日期
2011.02.22
申请号
KR20090075278
申请日期
2009.08.14
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
YOON, YOUNG BAE;KIM, JONG HYUK;KIM, KEON SOO;RAH, YOUNG SEOP;PARK, YOON MOON