发明名称 Integrated power detector with temperature compensation for fully-closed loop control
摘要 An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal.
申请公布号 US7893684(B2) 申请公布日期 2011.02.22
申请号 US20100848937 申请日期 2010.08.02
申请人 SILICON STORAGE TECHNOLOGY, INC. 发明人 KOBAYASHI BUN;ZHANG LIYANG;CHANG MAU-CHUNG FRANK;CHOW PEI-MING DANIEL
分类号 G01R5/22 主分类号 G01R5/22
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