发明名称 FILM FORMING METHOD AND PROCESSING SYSTEM
摘要 <p>Provided is a film-forming method for performing a film-forming process on a surface of a target substrate to be processed in an evacuable processing chamber, a recessed portion being formed on the surface of the target substrate. The method includes a transition metal-containing film processing process in which a transition metal-containing film is formed by a heat treatment by using a source gas containing a transition metal; and a metal film forming process in which a metal film containing an element of the group VIII of the periodic table is formed.</p>
申请公布号 KR20110017916(A) 申请公布日期 2011.02.22
申请号 KR20117000753 申请日期 2009.07.07
申请人 TOKYO ELECTRON LIMITED 发明人 MATSUMOTO KENJI;MIZUSAWA YASUSHI
分类号 H01L21/285;C23C14/14;C23C16/18;H01L21/3205 主分类号 H01L21/285
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